SiC chemical vapor deposition high-temperature apparatus(CVD)|Dai-ichi kiden, expert of high-frequency induction heating and hot press, induction heating apparatus

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Product

SiC chemical vapor deposition high-temperature apparatus(CVD method)

SiC気相成長高温CVD装置

2-zone heating system

Heating growth gas

Stable temperature distribution

 

Compound single crystal growth apparatus

Description

This equipment, employs a 2-zone heating system by the solenoid coil, it can control temperature of the growth gas and the substrate separately.

 

It could be produced that a high-temperature CVD apparatus which fit the needs of customers.

 

Feature

  • Power control of the 2 zones seperatel
  • Ultra-high-speed rotation of the substrate

 

Specification

Heating method

High frequency induction heating system

Susceptor heating and carbon gas injection

Output

50kW, 2 zone         

Heating temperature Max. 2000℃, operating 1800℃
Atmosphere Multi-system gas
Drive part

Susceptor rotating mechanism, susceptor elevating mechanism

Vacuum Dry pump, a turbo-molecular pump

|   Crystal growth   |

Contact

Please feel free to contact us if you have any questions.

042-488-3312

Reception time 09:00~17:30

Contact us by e-mail

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