SiC chemical vapor deposition high-temperature apparatus（CVD method）
2-zone heating system
Heating growth gas
Stable temperature distribution
Compound single crystal growth apparatus
Description
This equipment, employs a 2-zone heating system by the solenoid coil, it can control temperature of the growth gas and the substrate separately.
※ It could be produced that a high-temperature CVD apparatus which fit the needs of customers.
Feature
- Power control of the 2 zones seperatel
- Ultra-high-speed rotation of the substrate
Specification
| Heating method |
High frequency induction heating system Susceptor heating and carbon gas injection |
|---|---|
| Output |
５０kW, ２ zone |
| Heating temperature | Max. 2000℃, operating 1800℃ |
| Atmosphere | Multi-system gas |
| Drive part |
Susceptor rotating mechanism, susceptor elevating mechanism |
| Vacuum | Dry pump, a turbo-molecular pump |
| Crystal growth |
