Solution growth method single crystal growing apparatus(TSSG method)|Dai-ichi kiden, expert of high-frequency induction heating and hot press, induction heating apparatus

  1. HOME > 
  2. Product > 
  3. Crystal growth > 
  4. Solution growth method single crystal growing apparatus (TSSG method)

Product

Solution growth method single crystal growing apparatus (TSSG method)

溶液成長法SiC単結晶育成装置

SiC · AlN single crystal growth

at a low temperature region

in low-power

Compound single crystal growth apparatus

Description

This apparature can grow single crystal by dipping a seed to melt interface, in conjunction with the drive of the seed axis and the heat removal effect and the crucible driving process.
The adoption of high-frequency induction heating enables do precise output and temperature control for a variety of temperature program.

Feature

  • Space saving design
  • It can do growing SiC・AlN at low power with a high frequency induction heating 
  • Possible stable control even in a long period of growing
  • Frequency switchable type is also possible when requested

Application

SiC(Silicon carbide), AlN single crystal, Transition metal, or the like 

Specification

Growing method Solution growth method
Target crystal 2~4 inch, SiC・AlN single crytal
Heating method High-frequency induction heating
Heating temperature Max. 2100℃, operation 2000℃

Control

Output and temperature control switchable
Control type

Radiation thermometer temperature control / WRe thermocouple temperature control / power control

Drive control

Dipping jig drive unit, crucible-axis drive unit, heating coil driving unit

Chamber Water-cooled vacuum-tight open chamber, φ740XH1000mm
Atmosphere Air・vacuum・inert gas (Ar・He・N2 etc.)

Oscillator capacity

60kW

 Exhaust system

Rotary pump, oil diffusion pump

|   Crystal growth   |

Contact

Please feel free to contact us if you have any questions.

042-488-3312

Reception time 09:00~17:30

Contact us by e-mail

PAGE TOP