|1991||Establish Kabushiki kaisha Dai-ichi Kiden as the after-sales service section. Start taking care of the after-sales service for High frequency induction heating system.|
|1992||Start producing transistor invertor. Materialize high efficiency and space-saving.|
|1993||Merge with High frequency section in Dai-ichi Dentsu Kabushiki kaisha and take over all relevant business about High frequency induction heating system. Having Mitsubishi Corporation as a general distributor, we started developing, designing, manufacturing and distributing single crystal growing system.|
|1997||Mitsubishi Corporation finances 19.51% of the capital. Gain 11,000,000yen and make the capital 41,000,000yen.|
|1998||Established mass production system of CZ grower with the expansion of LT single crystal demand.|
|2000||Additional investment from Mitsubishi Corporation (total 25.0%). The capital becomes 97,000,000yen. Established System Research & Development Division.|
Started selling devices for compound semiconductors such as SiC single crystal growth system.
Started development of sapphire single crystal growth system by CZ Method.
Started selling the SiC single crystal growing equipment for development by solution growth method.
Started selling the rapid thermal annealing apparatus (RTA furnace) for SiC wafers.
|2005||Started manufacturing polycrystalline Si production system.|
|2006||Established Ibaraki plant with the production upgrade.|
|2007||Established second Ibaraki plant.
Started manufacturing on assignment of polycrystalline Si ingots.
|2010||Started selling the ultra large sapphire single crystal pulling system.|
|2013||Completed R&D of HPI high frequency power supply adopting SiC module and started manufacturing.|
|2014||Started manufacturing the hybrid energy saving type SPS system.|
|2015||Started manufacturing hybrid coutinuous type SPS system.
Started manufacturing SiC high frequency induction inverter HPI series and SiC Energization inverter MEI series.
|2017||Started selling the compact hot stamping system.|
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