Multicrystalline silicon production furnace
Fully controlled by PC
Screen configuration
Compact furnace (patent pending)
Low running costs,
excellent safety controls
MSF-690C / MSF-840C
Description
Dai-ichi Kiden leading-edge technology brings economical feature to silicon production
Multicrystalline silicon production systems for producing crystals for solar cells.
※ MSF-690C, small polycrystalline silicon coagulation growing system and MSF-180C for R&D use are also available.
Feature
- Fully controlled, screen configuration by PC (5 different interfaces)
- Compact furnace (patent pending)
- Low running cost
- Features excellent safety
Specification
| Maximum charging size of the silicon | 840x840×250（mm） |
|---|---|
| Growing time | 60～70h |
| Boule weight | 420kg |
| Heating temperature | Max 1700℃、operating temp.1600℃ (carbon heater) |
| Furnace pressure | Air～depressurization |
| Atmosphere |
Ar gas 1～50L/min、Pressure 0.2Mpa 50L/min |
| Power supply | 3-phase AC、400/440V、50/60HZ Common use、300KVA |
| Refractory | Molding insulation material (carbon material) |
|
Cooling water |
Pressure 0.3MPa、flow rate 400L/min、temperature 35℃ or less |
| Air | 0.5MPa or more |
| Chamber | Water-cooled double structure |
| Crystal growth |
