Compound single crystal growth apparatus

Liquid phase epitaxial system (LPE method)

Easy soaking with double shutter

Description

LPE apparatus (Liquid Phase Epitaxial) is a device that grows a thin film crystal in the liquid phase.
It is possible to obtain an optimum temperature distribution with a 3-zone heater.

Feature

  • Shutter has become easier to take is soaking has become a double
  • Exhaust available from the top
  • High-precision substrate lifting, rotary drive mechanism

Specification

Heating methodResistance heating system, 3-zone
HeaterKANTHAL SUPER, Various metal heating element(Mo, W, Ni, Cr)
Heating temperature800~1300℃
Flat zone length150mm±1℃(When empty inside)
Elevating speedHigh 5~200mm/min, low 0.5~20mm/h
Rotation speed1~30rpm/min(CW, CCW)