Description
This apparatus heat to sublimate raw material in vacuum or in an inert gas, then precipitate it to the seed crystal so that grow SiC bulk single crystal.
Feature
- Water-cooled double quartz tube to withstand the ultra-high-temperature specifications
- Precise pressure control in a wide range of range of up to atmospheric pressure from 1 torr
- It can be used at up to 2700 ℃
- It can be fully automatic controlled by a computer
- You can trace amount of pressure control in a wide range of range of up to atmospheric pressure from 1torr
- High vacuum specification available
Application
SiC、AlN
(This is SiC single crystal）
Specification
| Growing method | Sublimation method |
|---|---|
| Target crystal | 2～8 inch, SiC single crystal |
| Heating method | High frequency induction heating system |
| Heating temperature | Max. 2500℃ |
| Pressure control | 10～100±1 torr |
| Chamber | Water-cooled double quartz tube |
| Atmosphere | Ar・N2 |
| Exhaust system | Rotary pump, a turbo molecular pump |