History

Operated as the after-sales service division of Dai-ichi Dentsu Ltd.,
while advancing the development of transistor inverters.

1992

Start producing transistor invertor.
Materialize high efficiency and space-saving.

1993

Started the manufacturing and sales of crystal growth equipment and industrial furnaces utilizing high-frequency induction heating.

1998

Established mass production system of CZ grower with the expansion of LT single crystal demand.

2002

Started selling devices for compound semiconductors such as SiC single crystal growth system.
Started development of sapphire single crystal growth system by CZ Method.

2004

Started selling the SiC single crystal growing equipment for development by solution growth method.
Started selling the rapid thermal annealing apparatus (RTA furnace) for SiC wafers.

2005

Started manufacturing polycrystalline Si production system.

2007

Started manufacturing on assignment of polycrystalline Si ingots.

2010

Started selling the ultra large sapphire single crystal pulling system.

2013

Completed R&D of HPI high frequency power supply adopting SiC module and started manufacturing.

2014

Started manufacturing the hybrid energy saving type SPS system.

2015

Started manufacturing hybrid coutinuous type SPS system.
Started manufacturing SiC high frequency induction inverter HPI series and SiC Energization inverter MEI series.

2017

Established a new contracted test room (open lab).
Started selling the compact hot stamping system.

2018

Started manufacturing large hot press.

2019

Started manufacturing glove box multi-heating furnace.

2020

Started manufacturing hot press (block heater type).