SiC chemical vapor deposition high-temperature apparatus（CVD method）
2-zone heating system
Heating growth gas
Stable temperature distribution
Compound single crystal growth apparatus
This equipment, employs a 2-zone heating system by the solenoid coil, it can control temperature of the growth gas and the substrate separately.
※ It could be produced that a high-temperature CVD apparatus which fit the needs of customers.
- Power control of the 2 zones seperatel
- Ultra-high-speed rotation of the substrate
High frequency induction heating system
Susceptor heating and carbon gas injection
５０kW, ２ zone
|Heating temperature||Max. 2000℃, operating 1800℃|
Susceptor rotating mechanism, susceptor elevating mechanism
|Vacuum||Dry pump, a turbo-molecular pump|
| Crystal growth |