Liquid phase epitaxial system (LPE method)
Easy soaking with double shutter
Compound single crystal growth apparatus
Description
LPE apparatus (Liquid Phase Epitaxial) is a device that grows a thin film crystal in the liquid phase.
It is possible to obtain an optimum temperature distribution with a 3-zone heater.
Feature
- Shutter has become easier to take is soaking has become a double
- Exhaust available from the top
- High-precision substrate lifting, rotary drive mechanism
Specification
| Heating method | Resistance heating system, 3-zone |
|---|---|
| Heater | KANTHAL SUPER, Various metal heating element（Mo, W, Ni, Cr） |
| Heating temperature |
800～1300℃ |
| Flat zone length |
150mm±1℃（When empty inside） |
| Elevating speed |
High 5～200mm/min, low 0.5～20mm/h |
| Rotation speed |
1～30rpm/min（CW, CCW） |
| Crystal growth |
