Solution growth method single crystal growing apparatus (TSSG method)
SiC · AlN single crystal growth at a low temperature with low-power
Compound single crystal growth apparatus
Description
This apparature can grow single crystal by dipping a seed to melt interface, in conjunction with the drive of the seed axis and the heat removal effect and the crucible driving process.
The adoption of high-frequency induction heating enables do precise output and temperature control for a variety of temperature program.
Feature
- Space saving design
- It can do growing SiC・AlN at low power with a high frequency induction heating
- Possible stable control even in a long period of growing
- Frequency switchable type is also possible when requested
Application
SiC（Silicon carbide), AlN single crystal, Transition metal, or the like
Specification
| Growing method | Solution growth method |
|---|---|
| Target crystal | 2～8 inch, SiC・AlN single crytal |
| Heating method | High-frequency induction heating |
| Heating temperature | Max. 2300℃ |
|
Control |
Output and temperature control switchable |
| Control type |
Radiation thermometer temperature control / WRe thermocouple temperature control / power control |
|
Drive control |
Dipping jig drive unit, crucible-axis drive unit, heating coil driving unit |
| Chamber | Water-cooled vacuum-tight open chamber |
| Atmosphere | Vacuum・inert gas (Ar・He・N2 etc.) |
|
Exhaust system |
Rotary pump, oil diffusion pump |
| Crystal growth |
