Bulk cultivatable sublimation apparatus|Dai-ichi kiden, expert of high-frequency induction heating and hot press, induction heating apparatus

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Product

Bulk cultivatable sublimation apparatus

昇華法SiC単結晶育成装置

Best records SiC bulk grower
Precise pressure control from 1 torr
For mass production of SiC bulk

S278 / S380

Description

This apparatus heat to sublimate raw material in vacuum or in an inert gas, then precipitate it to the seed crystal so that grow SiC bulk single crystal. 

Feature

  • Water-cooled double quartz tube to withstand the ultra-high-temperature specifications (patent pending)
  • Precise pressure control in a wide range of range of up to atmospheric pressure from 1 torr
  • It can be used at up to 2700 ℃
  • It can be fully automatic controlled by a computer
  • You can trace amount of pressure control in a wide range of range of up to atmospheric pressure from 1torr
  • High vacuum specification available

 

Application

SiC, AlN

test:

(This is SiC single crystal)

Specification

Growing method Sublimation method
Target crystal 2~8 inch, SiC single crystal
Heating method High frequency induction heating system
Heating temperature Max. 2500℃
Pressure control 10~100±1 torr
Chamber Water-cooled double quartz tube
Atmosphere Ar・N2
Exhaust system Rotary pump, a turbo molecular pump

|   Crystal growth   |

Contact

Please feel free to contact us if you have any questions.

042-488-3312

Reception time 09:00~17:30

Contact us by e-mail

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